The JFET model is derived from the FET model of Shichman and Hodges. The dc
characteristics are defined by the parameters VTO and BETA, which determine the
variation of drain current with gate voltage, LAMBDA, which determines the
output conductance, and IS, the saturation current of the two gate junctions.
Two ohmic resistances, RD and RS, are included. Charge storage is modeled by
nonlinear depletion layer capacitances for both gate junctions which vary as the
-1/2 power of junction voltage and are defined by the parameters CGS, CGD, and
PB.

Coefficient for forward-bias depletion capacitance
formula

0.5

TNOM

Temperature at which the model parameters were
measured. If this value is specified overrides the nominal TNOM value
which is set in the options.

°C

TABS

Specifies the temperature at which the component
operates. This value, if specified, takes precedence over the analysis
temperature.

°C

TREL

Device temperature relative to current temperature.
If this parameter is specified but not the parameter TABS then the
current temperature of the component is equal to the current temperature
plus TREL.