Mos1: Level 1 MOSFET model

Parameter Description
l Length
w Width
ad Drain area
as Source area
pd Drain perimeter
ps Source perimeter
nrd Drain squares
nrs Source squares
icvds Initial Drain-Source voltage
icvgs Initial Gate-Source voltage
icvbs Initial Bulk-Source voltage
temp Instance temperature
id Drain current
is Source current
ig Gate current
ib Bulk current
ibd B-D junction current
ibs B-S junction current
vgs Gate-Source voltage
vds Drain-Source voltage
vbs Bulk-Source voltage
vbd Bulk-Drain voltage
von Turn-on voltage
vdsat Saturation drain voltage
sourcevcrit Critical source voltage
drainvcrit Critical drain voltage
rs Source resistance
sourceconductance Conductance of source
rd Drain conductance
drainconductance Conductance of drain
gm Transconductance
gds Drain-Source conductance
gmb Bulk-Source transconductance
gmbs Bulk-Source transconductance
gbd Bulk-Drain conductance
gbs Bulk-Source conductance
cbd Bulk-Drain capacitance
cbs Bulk-Source capacitance
cgs Gate-Source capacitance
cgd Gate-Drain capacitance
cgb Gate-Bulk capacitance
cqgs Capacitance due to gate-source charge storage
cqgd Capacitance due to gate-drain charge storage
cqgb Capacitance due to gate-bulk charge storage
cqbd Capacitance due to bulk-drain charge storage
cqbs Capacitance due to bulk-source charge storage
cbd0 Zero-Bias B-D junction capacitance
cbdsw0 Zero-Bias B-D sidewall capacitance
cbs0 Zero-Bias B-S junction capacitance
cbssw0 Zero-Bias B-S sidewall capacitance
qgs Gate-Source charge storage
qgd Gate-Drain charge storage
qgb Gate-Bulk charge storage
qbd Bulk-Drain charge storage
qbs Bulk-Source charge storage
p Instantaneous power

Mos2: Level 2 MOSFET model

Parameter Description
l Length
w Width
ad Drain area
as Source area
pd Drain perimeter
ps Source perimeter
nrd Drain squares
nrs Source squares
icvds Initial D-S voltage
icvgs Initial G-S voltage
icvbs Initial B-S voltage
temp Instance operating temperature
id Drain current
cd Drain current
ibd B-D junction current
ibs B-S junction current
is Source current
ig Gate current
ib Bulk current
vgs Gate-Source voltage
vds Drain-Source voltage
vbs Bulk-Source voltage
vbd Bulk-Drain voltage
von Turn-on voltage
vdsat Saturation drain voltage
sourcevcrit Critical source voltage
drainvcrit Critical drain voltage
rs Source resistance
sourceconductance Source conductance
rd Drain resistance
drainconductance Drain conductance
gm Transconductance
gds Drain-Source conductance
gmb Bulk-Source transconductance
gmbs Bulk-Source transconductance
gbd Bulk-Drain conductance
gbs Bulk-Source conductance
cbd Bulk-Drain capacitance
cbs Bulk-Source capacitance
cgs Gate-Source capacitance
cgd Gate-Drain capacitance
cgb Gate-Bulk capacitance
cbd0 Zero-Bias B-D junction capacitance
cbdsw0 Zero-Bias B-D sidewall capacitance
cbs0 Zero-Bias B-S junction capacitance
cbssw0 Zero-Bias B-S sidewall capacitance
cqgs Capacitance due to gate-source charge storage
cqgd Capacitance due to gate-drain charge storage
cqgb Capacitance due to gate-bulk charge storage
cqbd Capacitance due to bulk-drain charge storage
cqbs Capacitance due to bulk-source charge storage
qgs Gate-Source charge storage
qgd Gate-Drain charge storage
qgb Gate-Bulk charge storage
qbd Bulk-Drain charge storage
qbs Bulk-Source charge storage
p Instantaneous power

Mos3: Level 3 MOSFET model

Parameter Description
l Length
w Width
ad Drain area
as Source area
pd Drain perimeter
ps Source perimeter
nrd Drain squares
nrs Source squares
icvds Initial D-S voltage
icvgs Initial G-S voltage
icvbs Initial B-S voltage
temp Instance operating temperature
id Drain current
cd Drain current
ibd B-D junction current
ibs B-S junction current
is Source current
ig Gate current
ib Bulk current
vgs Gate-Source voltage
vds Drain-Source voltage
vbs Bulk-Source voltage
vbd Bulk-Drain voltage
von Turn-on voltage
vdsat Saturation drain voltage
sourcevcrit Critical source voltage
drainvcrit Critical drain voltage
rs Source resistance
sourceconductance Source conductance
rd Drain resistance
drainconductance Drain conductance
gm Transconductance
gds Drain-Source conductance
gmb Bulk-Source transconductance
gmbs Bulk-Source transconductance
gbd Bulk-Drain conductance
gbs Bulk-Source conductance
cbd Bulk-Drain capacitance
cbs Bulk-Source capacitance
cgs Gate-Source capacitance
cgd Gate-Drain capacitance
cgb Gate-Bulk capacitance
cqgs Capacitance due to gate-source charge storage
cqgd Capacitance due to gate-drain charge storage
cqgb Capacitance due to gate-bulk charge storage
cqbd Capacitance due to bulk-drain charge storage
cqbs Capacitance due to bulk-source charge storage
cbd0 Zero-Bias B-D junction capacitance
cbdsw0 Zero-Bias B-D sidewall capacitance
cbs0 Zero-Bias B-S junction capacitance
cbssw0 Zero-Bias B-S sidewall capacitance
qbs Bulk-Source charge storage
qgs Gate-Source charge storage
qgd Gate-Drain charge storage
qgb Gate-Bulk charge storage
qbd Bulk-Drain charge storage
p Instantaneous power

Mos6: Level 6 MOSFET model

Parameter Description
l Length
w Width
ad Drain area
as Source area
pd Drain perimeter
ps Source perimeter
nrd Drain squares
nrs Source squares
icvds Initial D-S voltage
icvgs Initial G-S voltage
icvbs Initial B-S voltage
temp Instance temperature
id Drain current
cd Drain current
is Source current
ig Gate current
ib Bulk current
ibs B-S junction capacitance
ibd B-D junction capacitance
vgs Gate-Source voltage
vds Drain-Source voltage
vbs Bulk-Source voltage
vbd Bulk-Drain voltage
rs Source resistance
sourceconductance Source conductance
rd Drain resistance
drainconductance Drain conductance
von Turn-on voltage
vdsat Saturation drain voltage
sourcevcrit Critical source voltage
drainvcrit Critical drain voltage
gmbs Bulk-Source transconductance
gm Transconductance
gds Drain-Source conductance
gbd Bulk-Drain conductance
gbs Bulk-Source conductance
cgs Gate-Source capacitance
cgd Gate-Drain capacitance
cgb Gate-Bulk capacitance
cbd Bulk-Drain capacitance
cbs Bulk-Source capacitance
cbd0 Zero-Bias B-D junction capacitance
cbdsw0 Zero-Bias B-D sidewall capacitance
cbs0 Zero-Bias B-S junction capacitance
cbssw0 Zero-Bias B-S sidewall capacitance
cqgs Capacitance due to gate-source charge storage
cqgd Capacitance due to gate-drain charge storage
cqgb Capacitance due to gate-bulk charge storage
cqbd Capacitance due to bulk-drain charge storage
cqbs Capacitance due to bulk-source charge storage
qgs Gate-Source charge storage
qgd Gate-Drain charge storage
qgb Gate-Bulk charge storage
qbd Bulk-Drain charge storage
qbs Bulk-Source charge storage
p Instantaneous power