| Parameter |
Description |
| icvbe |
Initial B-E voltage |
| icvce |
Initial C-E voltage |
| area |
Area factor |
| temp |
Instance temperature |
| ic |
Current at collector node |
| ib |
Current at base node |
| ie |
Emitter current |
| is |
Substrate current |
| vbe |
B-E voltage |
| vbc |
B-C voltage |
| gm |
Small signal transconductance |
| gpi |
Small signal input conductance - pi |
| gmu |
Small signal conductance - mu |
| gx |
Conductance from base to internal base |
| go |
Small signal output conductance |
| geqcb |
d(Ibe)/d(Vbc) |
| gccs |
Internal C-S cap. equiv. cond. |
| geqbx |
Internal C-B-base cap. equiv. cond. |
| cpi |
Internal base to emitter capacitance |
| cmu |
Internal base to collector capacitance |
| cbx |
Base to collector capacitance |
| ccs |
Collector to substrate capacitance |
| cqbe |
Cap. due to charge storage in B-E jct. |
| cqbc |
Cap. due to charge storage in B-C jct. |
| cqcs |
Cap. due to charge storage in C-S jct. |
| cqbx |
Cap. due to charge storage in B-X jct. |
| cexbc |
Total Capacitance in B-X junction |
| qbe |
Charge storage B-E junction |
| qbc |
Charge storage B-C junction |
| qcs |
Charge storage C-S junction |
| qbx |
Charge storage B-X junction |
| p |
Power dissipation |